We developed an in situ measurement system based on a synchrotron radiation nanobeam X-ray diffraction technique combined with a pump–probe method to investigate lattice deformation induced by the inverse piezoelectric effect in AlGaN/GaN high-electron-mobility transistor devices. Static and dynamic measurements using ultrafast X-ray pulses successfully captured changes in the c-plane lattice spacing in the AlGaN barrier layer coincided with the rising and falling edge of the gate voltage pulse at nanosecond resolution. This nanoscale time-resolved analysis reveals the influence of transient currents flowing in the device on the lattice deformation response during application of a gate voltage.

我们开发了一种基于同步辐射纳米束 X 射线衍射技术并结合泵浦探针方法的原位测量系统，用于研究 AlGaN/GaN 高电子迁移率晶体管器件中由逆压电效应引起的晶格变形。使用超快 X 射线脉冲的静态和动态测量成功地捕获了 AlGaN 势垒层中c面晶格间距的变化，与纳秒分辨率的栅极电压脉冲的上升沿和下降沿一致。这种纳米级时间分辨分析揭示了在施加栅极电压期间器件中流动的瞬态电流对晶格变形响应的影响。