The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conductivity. Controlling its dependence on the terminal biases is crucial for the design and optimization of radio-frequency applications based on multiple GFETs. However, the previous analysis of such dependence carried out for single devices is uncomplete and if not properly understood could result in circuit designs with poor performance. The control of the Dirac point shift (DPS) is particularly important for the deployment of graphene-based differential circuit topologies where keeping a strict symmetry between the electrically balanced branches is essential for exploiting the advantages of such topologies. This note sheds light on the impact of terminal biases on the DPS in a real device and sets a rigorous methodology to control it so to eventually optimize and exploit the performance of radio-frequency applications based on GFETs.

石墨烯场效应晶体管 (GFET) 的狄拉克电压代表在通道中设置电荷中性条件的栅极偏置，从而导致最小电导率。控制其对终端偏置的依赖对于基于多个 GFET 的射频应用的设计和优化至关重要。然而，之前对单个器件进行的这种依赖性分析并不完整，如果没有正确理解，可能会导致电路设计性能不佳。狄拉克点位移 (DPS) 的控制对于部署基于石墨烯的差分电路拓扑尤为重要，其中在电平衡分支之间保持严格的对称性对于利用此类拓扑的优势至关重要。