In this work, a light-sensitive photodetector based on ZrO₂ nanofibers (NFs) formed onto n-Si derived by the electrospinning technique was reported. According to the I–V measurements in the dark, the ZrO₂ NFs/n-Si has an ohmic current conduction mechanism at low voltages and the SCLC conduction mechanism at medium voltages, while the Fowler–Nordheim tunneling conduction model is dominant at high voltages. The dark current and the rectifying ratio were found to be 9.4 10⁻¹⁰ A (at −1.0 V) and 10 351 (at 1.0 V), respectively. The shunt resistance (R _sh) (at −1 V) and series resistance (R _s) (at +2 V) values were determined as 2.0 GΩ and 5.5 kΩ, respectively from the dark I–V plot. The device was shown to be highly sensitive to light and exhibits self-powering characteristics under illumination. The ON/OFF ratio was about 1.0 10⁶ at zero-bias (self-powered mode) suggested a good response of the device to the light intensity. The maximum responsivity and specific detectivity were calculated to be 1.44 mA W⁻¹ and 4.5 10⁸ Jones, respectively. Finally, capacitance and conductance versus bias voltage characteristics of the device were analyzed at various frequencies.

在这项工作中，报道了一种基于 ZrO ₂纳米纤维 (NFs)的光敏光电探测器，该纤维通过静电纺丝技术在 n-Si 上形成。根据在黑暗中的I - V测量，ZrO ₂ NFs/n-Si 在低电压下具有欧姆电流传导机制，在中压下具有 SCLC 传导机制，而 Fowler-Nordheim 隧道传导模型在高电压下占主导地位. 发现暗电流和整流比分别为 9.4 10 ^-10 A（-1.0 V）和 10 351（1.0 V）。分流电阻 ( R _sh ) (-1 V) 和串联电阻 ( R _s)（+2 V）值分别从暗I – V图中确定为 2.0 GΩ 和 5.5 kΩ 。该设备被证明对光高度敏感，并在光照下表现出自供电特性。零偏压（自供电模式）下的开/关比约为 1.0 10 ⁶表明器件对光强度有良好的响应。计算出的最大响应度和比检测率分别为 1.44 mA W ^-1和 4.5 10 ⁸ Jones。最后，分析了器件在不同频率下的电容和电导与偏置电压的关系。