The formation and disruption of conducting filament (CF) are responsible for the SET/RESET switching of resistive random access memory (ReRAM). The ReRAM enters into a low resistive state soon after the complete formation of CF and the process is followed by the radial growth of CF during the ON-state. The present investigation aims to develop a numerical and analytical model to realize the effect of CF radius on local temperature rise and activation power, combining the thermal reaction model (TRM) and power signature model. The numerical investigation is carried out using finite element method to obtain the local temperature rise and temperature distribution across the device. The numerical results show a similar increment pattern of local temperature as of analytical TRM i.e. the local temperature increases linearly with a rapid growth rate of ∼63% in initial CF radii and then gradually attains a steady-state temperature with ∼10% increment in higher CF radii. The relationship between resistance and compliance current is calculated which obeys the same reported trend in other switching oxides like TiO _X , CuO, NiO. Additionally, the activation power is determined where the resistance decreases (101.87–0.25 KΩ) due to the CF radial growth, which results in four orders of exponential increment in activation power from ∼0.04 W to 500 100 W. The power signature of numerical TRM is validated with that analytical TRM where the device attends a steady-state temperature after a certain CF radius (>25 nm) along with the activation power.

导电丝 (CF) 的形成和破坏是电阻式随机存取存储器 (ReRAM) 的 SET/RESET 切换的原因。在 CF 完全形成后，ReRAM 很快就会进入低电阻状态，然后在导通状态期间进行 CF 的径向生长。本研究旨在开发一种数值和解析模型，以结合热反应模型 (TRM) 和功率特征模型来实现 CF 半径对局部温升和活化功率的影响。数值研究是使用有限元方法进行的，以获得整个设备的局部温升和温度分布。数值结果显示了与分析 TRM 相似的局部温度增量模式，即 局部温度以初始 CF 半径约 63% 的快速增长率线性增加，然后逐渐达到稳态温度，CF 半径增加约 10%。计算电阻和顺从电流之间的关系，这与其他开关氧化物（如 TiO）中报告的趋势相同 _X 、CuO、NiO。此外，在电阻因 CF 径向增长而降低（101.87-0.25 KΩ）的情况下确定激活功率，这导致激活功率从 ~0.04 指数增加四个数量级W 到 500 100 W. 数值 TRM 的功率特征通过该分析 TRM 进行验证，其中设备在特定 CF 半径 (>25 nm) 以及激活功率后达到稳态温度。