In this paper, the effect of 1 MeV electron radiation on the kink effect in S ₂₂ of InP-based high electron mobility transistors (HEMTs) has been comprehensively analyzed. The radiated fluence is varied among 1 10¹⁴ cm⁻², 1 10¹⁵ cm⁻² and 1 10¹⁶ cm⁻². The size change of the kink effect before and after radiation is expressed by self-normalization and standard deviation. The results show that the kink effect appears at 36 GHz and becomes distinct in the sub-threshold region. The non-monotonous trend of the S ₂₂ curve caused by the kink effect increases as the fluence increases. The dual-feedback circuit methodology is adopted to explain the influence of electron radiation on the kink effect; moreover, the change of transconductance and gate capacitance is the main reason for the influence of electron radiation on the kink effect in S ₂₂. This research will provide theoretical guidance for InP-based HEMTs to be used in space radiation applications.

本文综合分析了1 MeV电子辐射对InP基高电子迁移率晶体管（HEMT）S ₂₂扭结效应的影响。辐射通量在1 10 ¹⁴ cm ^-2、1 10 ¹⁵ cm ^-2和1 10 ¹⁶ cm ^{-2 之间变化}。辐射前后扭结效应的大小变化用自归一化和标准差表示。结果表明，扭结效应出现在 36 GHz 并在亚阈值区域变得明显。S ₂₂的非单调趋势由扭结效应引起的曲线随着注量的增加而增加。采用双反馈电路方法解释电子辐射对扭结效应的影响；此外，跨导和栅极电容的变化是电子辐射影响S ₂₂扭结效应的主要原因。该研究将为基于 InP 的 HEMT 用于空间辐射应用提供理论指导。