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Cu2ZnSnS4 thin film as a counter electrode in zinc stannate-based dye-sensitized solar cells
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2021-09-06 , DOI: 10.1088/1361-6641/ac1962
Mina Soltanmohammadi 1, 2 , Vahid Karimi 1, 2 , Soheil Alee 1, 2 , Masoud Abrari 1, 2 , Morteza Ahmadi 1, 2 , Majid Ghanaatshoar 1, 2
Affiliation  

In this study, we deposited Cu2ZnSnS4 (CZTS) thin films with various thicknesses using electrodeposition and sputtering methods to exploit them as counter electrodes (CEs) in Zn2SnO4 -based dye-sensitized solar cells (DSSCs). The ternary Zn2SnO4 compound with wide bandgap energy, large corrosive resistivity, high electron mobility, and an appropriate conduction band edge position concerning the dye molecules (N719) can be an outstanding alternative for photoanode besides CZTS CE in DSSCs. On the other hand, CZTS is an impressive candidate as a CE material, but its electrocatalytic activity for the recovery of ${I^ - }/I_3^ - $ ionic species can be different depending on the synthesis process. Our results indicated the creation of porous morphology in the solution-based deposited films, which yields higher electrocatalytic activity in the CE performance in comparison with the physical deposition method, resulting in short circuit current densities of 9.77 and 8.40 mA cm−2 and open-circuit voltages of 633 and 583 mV for the DSSCs prepared by the respective techniques. The large active area and highly crystallized CZTS films, prepared by the electrodeposition method, led to an around 50% efficiency improvement compared to the widely used, more expensive platinum.



中文翻译:

Cu2ZnSnS4薄膜作为锡酸锌基染料敏化太阳能电池的对电极

在这项研究中,我们使用电沉积和溅射方法沉积了各种厚度的Cu 2 ZnSnS 4 (CZTS) 薄膜,以将它们用作 Zn 2 SnO 4基染料敏化太阳能电池 (DSSC ) 中的对电极 (CE )。除了 DSSC 中的 CZTS CE,三元 Zn 2 SnO 4化合物具有宽带隙能量、大腐蚀性电阻率、高电子迁移率和关于染料分子的适当导带边缘位置(N719),可以成为光电阳极的出色替代品。另一方面,CZTS 作为 CE 材料是一个令人印象深刻的候选者,但它的电催化活性用于回收${I^ - }/I_3^ - $离子种类可以根据合成过程而不同。我们的结果表明在基于溶液的沉积膜中产生了多孔形态,与物理沉积方法相比,这在 CE 性能中产生了更高的电催化活性,导致短路电流密度为 9.77 和 8.40 mA cm -2和开路-由相应技术制备的 DSSC 的电路电压为 633 和 583 mV。与广泛使用的更昂贵的铂相比,通过电沉积方法制备的大活性面积和高度结晶的 CZTS 薄膜使效率提高了约 50%。

更新日期:2021-09-06
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