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Performance analysis of 4H-SiC super-junction devices: impact of trench angle and improvement with multi-epi structure
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2021-08-31 , DOI: 10.1088/1361-6641/ac1c9f
Baozhu Wang 1 , Hengyu Wang 1, 2 , Ce Wang 1 , Haoyuan Cheng 1 , Na Ren 1, 2 , Qing Guo 1 , Kuang Sheng 1, 2
Affiliation  

This paper studies the impact of the trench angle on SiC super-junction device performance through the numerical simulation. Devices with different structure parameter sets (mesa width, epi doping) targeting different voltage ratings have been considered. It is found that with the optimum epi doping, the highest Baliga’s figure of merit (BFOM) is always achieved at the trench angle of 90. The advantage of 90 trench angle can be further increased by reducing the mesa width (MW). However, the 90 trench is hard to be achieved through the current fabrication technology. Once the trench angle is reduced slightly, the device BFOM will decrease evidently especially for high voltage devices. At this condition, the reduction of mesa width does not necessarily produce higher BFOM. For example, at the trench angle of 89 and trench depth of 25 μm, the BFOM of the device with MW = 3 μm is substantially higher than that of the device with MW = 1 μm. Such a phenomenon is contrary to conventional theory, which is crucial for device design. Finally, in order to improve the performance of devices with non-90 trenches, the multi-epi structure is proposed. With such a novel structure, significant improvements have been observed in the simulation. The BFOM increments for 2 kV, 3.5 kV and 5 kV voltage rating devices are 27.4%, 60.8% and 102.6% respectively, demonstrating the superiority of the proposed multi-epi structure for SiC super-junction devices.



中文翻译:

4H-SiC超结器件性能分析:沟槽角度的影响和多外延结构的改进

本文通过数值模拟研究了沟槽角度对SiC超结器件性能的影响。已经考虑了针对不同额定电压的具有不同结构参数集(台面宽度、外延掺杂)的器件。发现在最佳外延掺杂情况下,总是在 90 度的沟槽角处获得最高的 Baliga 品质因数 (BFOM)。通过减小台面宽度 (MW) 可以进一步增加 90 度沟槽角的优势。然而,以目前的制造技术很难实现90度沟槽。一旦沟槽角度稍微减小,器件BFOM就会明显减小,特别是对于高压器件。在这种情况下,台面宽度的减少不一定会产生更高的 BFOM。例如,当沟槽角度为 89,沟槽深度为 25μ m,MW = 3 μ m器件的 BFOM大大高于 MW = 1 μ m器件的 BFOM 。这种现象与对器件设计至关重要的传统理论相悖。最后,为了提高非90沟槽器件的性能,提出了多外延结构。有了这种新颖的结构,在模拟中观察到了显着的改进。2 kV、3.5 kV 和 5 kV 额定电压器件的 BFOM 增量分别为 27.4%、60.8% 和 102.6%,证明了所提出的用于 SiC 超结器件的多外延结构的优越性。

更新日期:2021-08-31
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