Tin-based binary chalcogenide semiconductors SnSe and SnS have created increased interest in the production of earth-abundant and eco-friendly thin film solar cells. Thin films of SnSe were prepared on glass substrates at different temperatures via a nebulized spray pyrolysis technique using Stannous chlroride dihydrate and Se powder. Deposited films were characterized by structural, morphological, compositional, optical, and electrical properties. X-ray diffraction studies confirm the films are of polycrystalline orthorhombic crystal structure irrespective of substrate temperature. Scanning electron microscopy studies revealed uniform deposition with nanometer range grain size. Stoichiometric films of SnSe were observed from energy dispersive analysis by X-ray studies. UV–vis spectroscopy confirmed the formation of good adherence thin films with an average transmittance of ∼70% in the visible region. Optical band gap was in the range of 1.14–1.24. The lower absorption and high transmittance in the visible region observed at lower substrate temperature represented the good optical quality of the crystals with low absorption or scattering losses. The lower electrical resistivity value of 4.84 Ωcm showed that the films are semiconducting. The structural, optical, morphological, and electrical conductivity studies of tin selenide thin films confirmed that the optimum substrate temperatures for depositing SnSe thin films by this NSP technique is 300.

锡基二元硫族化物半导体 SnSe 和 SnS 引起了人们对生产地球上资源丰富且环境友好的薄膜太阳能电池的兴趣。使用二水合氯化亚锡和硒粉，通过雾化喷雾热解技术在不同温度下在玻璃基板上制备了 SnSe 薄膜。沉积薄膜的特征在于结构、形态、成分、光学和电学特性。X 射线衍射研究证实，无论基材温度如何，薄膜都具有多晶正交晶体结构。扫描电子显微镜研究显示具有纳米级晶粒尺寸的均匀沉积。通过 X 射线研究从能量色散分析中观察到 SnSe 的化学计量薄膜。紫外-可见光谱证实形成了良好的粘附薄膜，在可见光区的平均透射率为~70%。光学带隙在 1.14-1.24 的范围内。在较低衬底温度下观察到的可见光区较低的吸收和较高的透射率代表了晶体具有低吸收或散射损失的良好光学质量。4.84 Ωcm 的较低电阻率值表明薄膜是半导体的。硒化锡薄膜的结构、光学、形态和电导率研究证实，通过这种 NSP 技术沉积 SnSe 薄膜的最佳基板温度为 300。在较低衬底温度下观察到的可见光区较低的吸收和较高的透射率代表了晶体具有低吸收或散射损失的良好光学质量。4.84 Ωcm 的较低电阻率值表明薄膜是半导体的。硒化锡薄膜的结构、光学、形态和电导率研究证实，通过这种 NSP 技术沉积 SnSe 薄膜的最佳基板温度为 300。在较低衬底温度下观察到的可见光区较低的吸收和较高的透射率代表了晶体具有低吸收或散射损失的良好光学质量。4.84 Ωcm 的较低电阻率值表明薄膜是半导体的。硒化锡薄膜的结构、光学、形态和电导率研究证实，通过这种 NSP 技术沉积 SnSe 薄膜的最佳基板温度为 300。