In this study, a resistive random-access memory (RRAM) with a metal-insulator-metal structure was fabricated on polyimide substrates with different thicknesses, and the insulating layer was deposited with zinc oxide material by the sol-gel method. The electrical properties of the RRAM devices were evaluated using bending tests. In the bending tests, the operating electric field increased and the retention time decreased; nevertheless, the electrical properties of the device with a thicker polyimide substrate were less affected. The results of this study will help improve the characteristics of RRAMs on soft boards.

中文翻译：

---

在不同厚度的柔性聚酰亚胺基板上制备氧化锌电阻随机存取存储器

在这项研究中，在不同厚度的聚酰亚胺基板上制造了具有金属-绝缘体-金属结构的电阻式随机存取存储器（RRAM），并通过溶胶-凝胶方法用氧化锌材料沉积绝缘层。使用弯曲测试评估 RRAM 器件的电性能。在弯曲试验中，操作电场增加，停留时间减少；尽管如此，具有较厚聚酰亚胺基板的器件的电气特性受到的影响较小。这项研究的结果将有助于改善软板上 RRAM 的特性。