In this article, an interfacial conductivity model for the surface potential and the drain current was proposed based on the metal-interface-ferroelectric-insulator-semiconductor (MIFIS) structure negative capacitance field effect transistor (NC-FET). The simulating results illustrate that the electrical conductivity (σ) of the interface layer between the electrode and ferroelectric thin film caused by lattice misfit plays an important role in the process of voltage amplifying and steep switching for the NC-FET. It is indicated that new device design rules should take into account this scenario.

中文翻译：

---

界面电导率对负电容场效应晶体管电特性的影响

在本文中，基于金属-界面-铁电-绝缘体-半导体（MIFIS）结构的负电容场效应晶体管（NC-FET），提出了表面电位和漏极电流的界面电导模型。仿真结果表明，由晶格失配引起的电极与铁电薄膜界面层的电导率（σ）在NC-FET的电压放大和陡峭开关过程中起着重要作用。表明新的设备设计规则应考虑到这种情况。