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Influence of Nano Silicon Carbide (SiC) Embedded in Poly(Vinyl Alcohol)(PVA) Lattice on the Optical Properties
Silicon ( IF 3.4 ) Pub Date : 2021-09-06 , DOI: 10.1007/s12633-021-01325-8
Zeena Mowafaq Al-Azzawi 1 , Mohammed Al-Baidhani 1 , Abdul Rahman N. Abed 2 , Rasheed N. Abed 2
Affiliation  

The Poly(vinyl alcohol) (PVA)/Silicon Carbide (SiC) nanocomposites thin films have been precipitated on glass substrates with different percentage content of SiC (1%, 2%, 3%, and 4% wt.) by utilizing the casting method. UV-Visible wavelength ranges from (200–800 nm) were used to compute the optical properties. The results of (PVA/SiC) nanocomposite thin films were used to calculate optical properties such as absorption, refractive, index, extinction factor, dielectric constants, and optical conductivity. The optical parameters increased with increasing the concentration of SiC nanoparticles. The energy gap for direct transition has decreased from 5.2 eV to 5.0 eV, while the indirect transition reduced from 4.3 eV to 4.0 eV. The direct forbidden dropped from 5.1 eV to 5.0 eV, but the value of indirect forbidden change from 4.0 eV to 3.6 eV. The results stated that increases in nano SiC in the structure of PVA lattice is accompanied with decreasing the energy gap value. The results have shown that the urbach energy of (PVA/SiC) increase with increasing SiC content. The dielectric constant high-frequency values were estimated at 3.534 to 2.755. Whereas carrier concentricity per the effective mass \( \left(\frac{\boldsymbol{N}}{{\boldsymbol{m}}^{\ast }}\right) \) declines from (7.905*1061 (m3. Kg)−1 to 2.408 × 1061 (m3. Kg)−1), while the unique oscillator energy range change from 6.073 eV to 20.685 eV. But regarding the energy of the dispersion decrease from 4.625 eV to 46.484 eV. The (PVA/SiC) thin films may be used in many fields of optoelectronics as: solar cells and electronic applications with low cost, which is used in spectroscopic features and electronics.



中文翻译:

嵌入聚(乙烯醇)(PVA)晶格的纳米碳化硅(SiC)对光学性能的影响

聚(乙烯醇)(PVA)/碳化硅(SiC)纳米复合薄膜已通过浇铸沉积在具有不同百分比含量的 SiC(1%、2%、3% 和 4% wt.)的玻璃基板上方法。紫外-可见波长范围(200-800 nm)用于计算光学特性。(PVA/SiC) 纳米复合薄膜的结果用于计算光学特性,如吸收、折射率、折射率、消光因子、介电常数和光导率。光学参数随着 SiC 纳米粒子浓度的增加而增加。直接跃迁的能隙从 5.2 eV 减少到 5.0 eV,而间接跃迁从 4.3 eV 减少到 4.0 eV。直接禁止值从 5.1 eV 下降到 5.0 eV,但间接禁止值从 4.0 eV 变为 3.6 eV。结果表明,PVA晶格结构中纳米SiC的增加伴随着能隙值的降低。结果表明(PVA/SiC)的urbach能量随着SiC含量的增加而增加。介电常数高频值估计为 3.534 至 2.755。而每个有效质量的载流子同心度\( \left(\frac{\boldsymbol{N}}{{\boldsymbol{m}}^{\ast }}\right) \)从 (7.905*10 61 (m 3 . Kg) -1下降到 2.408 × 10 61 (m 3 . Kg) -1 ),而独特的振荡器能量范围从 6.073 eV 变为 20.685 eV。但是关于色散的能量从 4.625 eV 降低到 46.484 eV。(PVA/SiC) 薄膜可用于许多光电领域,如:太阳能电池和低成本电子应用,用于光谱特征和电子产品。

更新日期:2021-09-07
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