In this paper, we propose a new technique in silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor in order to obtain a high breakdown voltage. The structure is characterized by multiple N and P doped wells (diode wells) in the buried oxide. Therefore, we call the structure multiple diode wells SOI LDMOS (MDW-LDMOS). The key idea in this work is to amend the electric field of the buried oxide layer and modulate the electric field in the drift region, both of them leading to a high breakdown voltage. Based on the electric displacement continuity, the charge densities in the wells effectively amend the electric field of the buried oxide layer and reduce the electric field of the silicon layer. Also, the diode wells make the uniform distribution of the electric field by producing multiple additional peaks. Using two-dimensional numerical simulation, we demonstrate that the breakdown voltage of the proposed structure improves about 260% in comparison with a conventional LDMOS (C-LDMOS) structure.

在本文中，我们提出了一种绝缘体上硅 (SOI) 横向双扩散金属氧化物半导体 (LDMOS) 场效应晶体管的新技术，以获得高击穿电压。该结构的特点是掩埋氧化物中有多个 N 和 P 掺杂阱（二极管阱）。因此，我们称这种结构为多二极管阱SOI LDMOS（MDW-LDMOS）。这项工作的关键思想是修正埋氧层的电场和调制漂移区的电场，两者都导致高击穿电压。基于电位移的连续性，阱中的电荷密度有效地修正了埋氧化层的电场，降低了硅层的电场。还，二极管阱通过产生多个附加峰来使电场均匀分布。使用二维数值模拟，我们证明所提出的结构的击穿电压与传统的 LDMOS (C-LDMOS) 结构相比提高了约 260%。