${\mathrm{Cd}}_3{\mathrm{As}}_2$ is one of the prototypical topological Dirac semimetals. Here, we manipulate the band inversion responsible for the emergence of Dirac nodes by alloying ${\mathrm{Cd}}_3{\mathrm{As}}_2$ with topologically trivial ${\mathrm{Zn}}_3{\mathrm{As}}_2$. The carrier density monotonically decreases and the resistivity is enhanced as $x$ is increased. For larger $x$, the thermoelectric figure of merit exhibits comparably large values exceeding 0.3 at room temperature, due to the combined effects of a strong enhancement of the thermopower, an only moderate increase in the resistivity, and a suppression of the thermal conductivity. Complementary quantum-oscillation data and optical-conductivity measurements allow us to infer that the Dirac nodes are gapped out, and a band structure with a partly flat dispersion likely emerges in the higher-$x$ region in ${\mathrm{Cd}}_{3-x}{\mathrm{Zn}}_x{\mathrm{As}}_2$.

中文翻译：

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Dirac-半金属系统Cd3−xZnxAs2 中合金化诱导的热电势增强

${\mathrm{光盘}}_3{\mathrm{作为}}_2$是典型的拓扑狄拉克半金属之一。在这里，我们通过合金化来操纵导致狄拉克节点出现的能带反转${\mathrm{光盘}}_3{\mathrm{作为}}_2$ 与拓扑无关 ${锌}_3{\mathrm{作为}}_2$. 载流子密度单调降低，电阻率提高为$X$增加。对于更大的$X$，由于热电势的强烈增强、电阻率仅适度增加和热导率的抑制的综合影响，热电品质因数在室温下表现出相对较大的值，超过 0.3。互补的量子振荡数据和光导率测量使我们能够推断狄拉克节点是有间隙的，并且在更高的区域可能会出现具有部分平坦色散的带结构。$X$ 地区在 ${\mathrm{光盘}}_{3-X}{锌}_X{\mathrm{作为}}_2$.