An oscillator is a vital component as the energy source in microwave telecommunication system. Microwave oscillators designed using Gunn diode have poor DC to RF efficiency. IMPact Ionization Avalanche Transit-Time diode (IMPATT) oscillators have the drawback of poor noise performance. The transistorized oscillators have a limitation to the maximum oscillation frequency which means that they cannot be used for oscillators designed for high frequencies. To design negative series feedback Dielectric Resonator Oscillator (DRO), the resonant unit uses a dielectric resonator (DR) since it is small in size, light in weight, has high-Quality (Q) factor, better stability and also it is inexpensive. It has the benefits of low-phase noise, low cost, miniaturization, high stability, applicable for devices designed at high frequencies and had already been widely applied, so the research on microwave dielectric oscillator has also been one of the focus of today’s microwave integrated circuits. DRO is widely used in electronic warfare, missile, radar and communication systems. The DRO incorporates High-Electron Mobility Transistor (HEMT) as an active device since it offers higher power-added efficiency combined with excellent low-noise figures and performance. The entire circuit of DRO using HEMT at 26GHz is designed using Agilent Advanced Design System (ADS) software. In this, DRO different measurements of parameters are done such as output power which is typically +11dBm for 26GHz DRO, phase noise at 10kHz offset for 26GHz DRO it is 80dBc/Hz. The frequency pushing and frequency pulling for 26GHz DRO its typical values are 30kHz/V and 1MHz, respectively.

中文翻译：

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用于空间应用的 26GHz 高电子迁移率晶体管介质谐振器振荡器研究

振荡器是微波通信系统中作为能源的重要组成部分。使用耿氏二极管设计的微波振荡器的直流到射频效率较差。IMPact 电离雪崩渡越时间二极管 (IMPATT) 振荡器具有噪声性能差的缺点。晶体管振荡器对最大振荡频率有限制，这意味着它们不能用于为高频设计的振荡器。为了设计负串联反馈介质谐振器振荡器（DRO），谐振单元使用介质谐振器（DR），因为它体积小，重量轻，具有高质量（问) 因素，稳定性更好，而且价格便宜。它具有低相位噪声、低成本、小型化、高稳定性等优点，适用于高频设计的器件并已得到广泛应用，因此对微波介质振荡器的研究也一直是当今微波集成的重点之一。电路。DRO广泛用于电子战、导弹、雷达和通信系统。DRO 采用高电子迁移率晶体管 (HEMT) 作为有源器件，因为它提供更高的功率附加效率以及出色的低噪声系数和性能。使用 HEMT 的 DRO 整个电路在 26GHz 是使用安捷伦高级设计系统 (ADS) 软件设计的。在这种情况下，DRO 对参数进行了不同的测量，例如输出功率，这通常是+11dBm 为 26GHz DRO，相位噪声为 1026 kHz 偏移GHz DRO 为 80分贝/赫兹。26的推频拉频GHz DRO 其典型值为 30kHz/V 和 1兆赫，分别。