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An accurate ISF-based analysis and simulation method for phase noise in LC/Ring oscillators
Microelectronics Journal ( IF 2.2 ) Pub Date : 2021-09-07 , DOI: 10.1016/j.mejo.2021.105240
Zirui Jin 1 , Dongsheng Liu 1 , Ang Hu 1 , Xiaoyu Shan 1 , Chengcheng Zhang 1 , Yanwen Su 1 , Xuecheng Zou 1 , Xu Zhao 2
Affiliation  

This paper presents an accurate ISF-based phase noise analysis method for LC/Ring oscillators. The proposed method can simultaneously quantify the effect of flicker noise and thermal noise on phase noise. The impulse sensitivity function (ISF) tool is used to evaluate the effect of flicker noise sources. An equivalent thermal noise resistor is utilized to assess the thermal noise contribution and simplify the analysis process. Based on the proposed method, the phase noise performance of a voltage-controlled oscillator (VCO) with source damping resistors is discussed. Simulated in 180-nm TSMC and 110-nm HHGRACE CMOS processes, the accuracy of the proposed method is verified. The predicted phase noise performance is consistent with the simulation results in 1/f3 and 1/f2 region, achieving 1-dB accuracy in diverse oscillator topologies.



中文翻译:

LC/环形振荡器相位噪声的精确基于ISF的分析和仿真方法

本文提出了一种基于 ISF 的精确相位噪声分析方法,适用于 LC/环形振荡器。所提出的方法可以同时量化闪烁噪声和热噪声对相位噪声的影响。脉冲灵敏度函数 (ISF) 工具用于评估闪烁噪声源的影响。等效热噪声电阻器用于评估热噪声贡献并简化分析过程。基于所提出的方法,讨论了带有源阻尼电阻器的压控振荡器 (VCO) 的相位噪声性能。在 180-nm TSMC 和 110-nm HHGRACE CMOS 工艺中进行仿真,验证了所提出方法的准确性。预测的相位噪声性能与 1/ f 3和 1/ f 2的仿真结果一致 区域,在不同的振荡器拓扑中实现 1-dB 精度。

更新日期:2021-09-23
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