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Graphene-substrate decoupling by S segregation. A LEEM/LEED study
Carbon ( IF 10.9 ) Pub Date : 2021-09-07 , DOI: 10.1016/j.carbon.2021.08.088
Masahiko Suzuki 1 , Yasushi Yamauchi 1 , Daisuke Fujita 1 , Tsuneo Yasue 2 , Takanori Koshikawa 2 , Ernst Bauer 3
Affiliation  

The growth of graphene on Ni(110) is studied with low energy electron microscopy, low energy electron diffraction (LEED) and associated methods at several sulfur coverages obtained by surface segregation and compared with growth on the clean surface. On the clean surface graphene grows nearly epitaxial with small azimuthal alignment fluctuations. The segregated S reduces the interaction between graphene and Ni, which results in the formation of several azimuthal orientations. The reduced film-substrate interaction is evident in the details of the LEED pattern, in the work function change and the energy dependence of the specular reflected intensity. This study clarifies the differences between earlier studies of graphene growth on Ni(110) and suggests using impurity surface segregation as means for decoupling of graphene from the substrate.



中文翻译:

通过 S 偏析实现石墨烯-基板去耦。LEEM/LEED 研究

石墨烯在 Ni(110) 上的生长通过低能电子显微镜、低能电子衍射 (LEED) 和相关方法在通过表面偏析获得的几种硫覆盖下进行研究,并与在清洁表面上的生长进行比较。在干净的表面上,石墨烯几乎外延生长,方位角排列波动很小。分离的 S 减少了石墨烯和 Ni 之间的相互作用,从而导致形成多个方位角取向。在 LEED 图案的细节、功函数变化和镜面反射强度的能量依赖性中,薄膜-基材相互作用的减少是显而易见的。该研究澄清了早期石墨烯在 Ni(110) 上生长的研究之间的差异,并建议使用杂质表面分离作为石墨烯与基板去耦的手段。

更新日期:2021-09-24
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