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Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs
IEEE Transactions on Device and Materials Reliability ( IF 2 ) Pub Date : 2021-07-05 , DOI: 10.1109/tdmr.2021.3094510
Theodoros A. Oproglidis , Theano A. Karatsori , Christoforos G. Theodorou , Andreas Tsormpatzoglou , Sylvain Barraud , Gerard Ghibaudo , Charalabos A. Dimitriadis

The low-frequency noise of short channel triple-gate junctionless (TG JL) MOSFET has been investigated in the frequency and time domains before and after hot carrier aging (HCA). The objective of this work is to investigate the interaction between HCA/flicker noise (1/f noise) and random telegraph noise (RTN) of short channel length device (L = 25 nm) exhibiting high density of interface traps. Significant variation in the noise spectral density has been observed between the fresh and the stressed device, related to the occurrence of generation-recombination (g-r) noise. Gate voltage dependence of g-r noise has been observed, assigned to gate dielectric traps and interface traps. In the fresh device, the noise is dominated by 1/f noise and multiple level RTN due to interface traps. In the stressed device, the 1/f noise is overlaid by multiple level RTN due to traps in the gate dielectric and at the gate insulator-silicon interface. The multiple level RTN relative amplitude can be described by the generic carrier number with correlated mobility fluctuations model as for the two level RTN detected in long channel devices (L = 65 and 95 nm).

中文翻译:

热载流子老化对短沟道三栅极无结 MOSFET 的 1/f 和随机电报噪声的影响

已在热载流子老化 (HCA) 前后的频域和时域中研究了短沟道三栅无结 (TG JL) MOSFET 的低频噪声。这项工作的目的是研究 HCA/闪烁噪声(1/f 噪声)与短通道长度器件(L = 25 nm)的随机电报噪声 (RTN) 之间的相互作用,这些器件表现出高密度的界面陷阱。在新器件和受压器件之间观察到噪声频谱密度的显着变化,这与产生-复合 (gr) 噪声的发生有关。已经观察到 gr 噪声的栅极电压依赖性,分配给栅极介电陷阱和界面陷阱。在新器件中,由于界面陷阱,噪声以 1/f 噪声和多级 RTN 为主。在受压装置中,由于栅极电介质中和栅极绝缘体-硅界面处的陷阱,1/f 噪声被多级 RTN 覆盖。多级 RTN 相对幅度可以通过具有相关移动性波动模型的通用载波数来描述,就像在长信道设备(L = 65 和 95 nm)中检测到的两级 RTN 一样。
更新日期:2021-09-07
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