Self-heating (SH)-induced electrical and optical switching in high quality VO₂ films grown by magnetron sputtering on a c-cut sapphire substrate has been investigated under various applied constant current pulses (I_D). The effect of SH on the behavior of electrical conductivity (σ), optical transmittance (\(\tilde{T })\), and film temperature (T) examined by applying a constant current pulse of various magnitudes with a pulse duration of five seconds (Δt = 5 s) in VO₂ films which were pre-heated to and stabilized at 57 °C, at the brink of insulator-to-metal transition (IMT). The SH effect that arose from the application of constant I_D pulses led to a significant increase in T and substantial changes in σ and \(\tilde{T }\). Observations showed that, depending on the magnitude of I_D, the σ and \(\tilde{T }\) demonstrate strikingly different temporal behavior not only during the SH-induced IMT but also after the removal of I_D. The observed phenomena could be explained using a simple model based on percolation theory previously proposed for the present system. The outcome of the model is confirmed by the results of the structural IMT obtained by Raman micromapping.

自加热（SH）在高品质诱导电气和光学开关VO _2层通过磁控溅射在c切割蓝宝石衬底上生长的薄膜各种施加恒定电流脉冲（下已经研究我_d）。SH 对电导率 ( σ )、透光率 ( \(\tilde{T})\)和薄膜温度 ( T ) 行为的影响，通过施加不同幅度的恒定电流脉冲，脉冲持续时间为 5秒 (Δ t  = 5 s) 在 VO ₂薄膜中，该薄膜预热至并稳定在 57 °C，处于绝缘体到金属转变 (IMT) 的边缘。应用常数引起的 SH 效应I _D脉冲导致T的显着增加以及σ和\(\tilde{T }\)的显着变化。观察表明，根据I _D的大小，σ和\(\tilde{T }\)不仅在 SH 诱导的 IMT 期间而且在去除I _D之后都表现出显着不同的时间行为。可以使用基于先前为本系统提出的渗透理论的简单模型来解释观察到的现象。通过拉曼显微成像获得的结构 IMT 结果证实了模型的结果。