In this work, reliability of boron-doped graphene field effect transistor (GFET) is examined by modeling the effect of doping in terms of linearity performance metrics. The key potential (V_N) induced in B doped GFET is analytically modeled for various B doping concentrations. An accurate compact equivalent circuit model integrated with V_N for B doped GFET is proposed to investigate the effects of memoryless nonlinearity on transconductance. The proposed equivalent circuit model is verified with the simulated results of an industry standard circuit simulation tool. The fundamental figures of merit (FOMs) such as second and third order harmonic distortion terms (HD₂ and HD₃), gain compression point (A_{in, 1dB}), second and third order intermodulation distortion terms (IM₂ and IM₃), second and third order input intercept points (A_IIP2 and A_IIP3) are mathematically modeled for doped GFET to examine the linear behaviour of the device. In addition to that, these FOMs are investigated with respect to various B doping concentrations, applied small signal amplitude, and gate-oxide capacitance. The proposed model is compatible and predicting accurate results for both B doped and undoped GFET. The simulation results are having excellent agreement with the mathematical model, which are also compared with undoped GFET and conventional MOSFET. It is also noticed that by doping the graphene sheet with boron significantly induces bandgap in it and hence enhances the linear behaviour of the B doped GFET. Hence, reliability of doped GFET is improved while comparing with undoped GFET and promises highly desirable linearity requirement in analog/RF applications.

在这项工作中，硼掺杂石墨烯场效应晶体管 (GFET) 的可靠性通过在线性性能指标方面对掺杂的影响进行建模来检查。在 B 掺杂的 GFET 中诱导的关键电位 ( V _N ) 针对各种 B 掺杂浓度进行了分析建模。为研究无记忆非线性对跨导的影响，提出了一种用于 B 掺杂 GFET 的与V _N集成的精确紧凑等效电路模型。所提出的等效电路模型通过工业标准电路仿真工具的仿真结果进行了验证。基本品质因数 (FOM)，例如二阶和三阶谐波失真项（HD ₂和HD ₃)、增益压缩点（A _{in , 1 dB}）、二阶和三阶互调失真项（IM ₂和IM ₃）、二阶和三阶输入截取点（A _{IIP 2}和A _{IIP 3}) 对掺杂 GFET 进行数学建模，以检查器件的线性行为。除此之外，还针对各种 B 掺杂浓度、施加的小信号幅度和栅极氧化物电容对这些 FOM 进行了研究。所提出的模型兼容并预测了 B 掺杂和未掺杂 GFET 的准确结果。仿真结果与数学模型具有很好的一致性，并与未掺杂的 GFET 和常规 MOSFET 进行了比较。还注意到，通过用硼掺杂石墨烯片显着诱导其中的带隙，因此增强了 B 掺杂的 GFET 的线性行为。因此，与未掺杂的 GFET 相比，掺杂 GFET 的可靠性得到了提高，并有望在模拟/RF 应用中满足非常理想的线性度要求。