Using no catalyst, hafnium carbide nanowires (HfCnws) layer was in-situ synthesized and its controllable growth was realized on carbon/carbon (C/C) composites. Microstructural evolution from CNTs to HfCnws revealed that the growth of HfCnws was based on vapor-solid (VS) mechanism and root growth was the common growth type. Increased relative content of carbon source reduced the aspect ratio but promoted the transformation of HfCnws from single-prong growth to multiple-prong growth. After the introduction of HfCnws, the oxidation resistance of SiC coating was increased by 58.7%, which could be attributed to its improved toughness from the multiple-prong growth of HfCnws.

在不使用催化剂的情况下，原位合成了碳化铪纳米线（HfCnws）层，并在碳/碳（C/C）复合材料上实现了其可控生长。从碳纳米管到 HfCnws 的微观结构演变表明，HfCnws 的生长基于气固 (VS) 机制，根生长是常见的生长类型。碳源相对含量的增加降低了纵横比，但促进了 HfCnws 从单叉生长向多叉生长的转变。引入 HfCnws 后，SiC 涂层的抗氧化性提高了 58.7%，这可能是由于 HfCnws 的多管齐下提高了其韧性。