XPS combined with profiling by Ar₂₅₀₀⁺ gas cluster ion beam (GCIB) sputtering has been used to obtain new refined data on the polarization and processing-dependent Li/Nb ratio for the surface of a LiNbO₃ single crystal. The most suitable GCIB parameters (normal incidence, 10 keV energy) and irradiation dose (less than or equal to 2.7 × 10¹⁶ ions/cm²) have been determined and employed to perform high resolution depth profile analysis without cluster ion-induced Li/Nb changes.

The Li/Nb profiles obtained for Z cut wafers with positive and negative faces revealed the presence of two distinct regions. The initial 0.3 nm-thick region had a low Li/Nb ratio due to machining and leaching and did not show a dependence on the polarity direction. The next profile region had a constant Li/Nb ratio, which depended on the crystal polarity. The Li/Nb ratio for the Z+ surface of a wafer and a cleaved sample exceeded the values for the Z– surface of a wafer by 1.2 times. This result confirms theoretical predictions of a different stoichiometry for Z+ and Z– terminations and indicates the ability of GCIB to reach the surface condition that is close to the perfect termination.

XPS 与通过 Ar ₂₅₀₀ ⁺气体簇离子束 (GCIB) 溅射进行的分析相结合，已被用于获得关于 LiNbO ₃单晶表面的极化和依赖于加工的 Li/Nb 比率的新精确数据。最合适的 GCIB 参数（法向入射，10 keV 能量）和辐射剂量（小于或等于 2.7 × 10 ¹⁶离子/cm ²）已被确定并用于在没有团簇离子诱导的 Li/铌变化。

为具有正面和负面的 Z 切割晶片获得的 Li/Nb 分布显示存在两个不同的区域。由于加工和浸出，最初的 0.3 nm 厚区域具有较低的 Li/Nb 比，并且不显示对极性方向的依赖性。下一个轮廓区域具有恒定的 Li/Nb 比，这取决于晶体极性。晶片 Z+ 表面和解理样品的 Li/Nb 比值是晶片 Z- 表面值的 1.2 倍。该结果证实了对 Z+ 和 Z- 终止的不同化学计量的理论预测，并表明 GCIB 达到接近完美终止的表面条件的能力。