The aim of this work is to study the photovoltaic performance of a solar cell based on GaSe materials using SCAPS-1D simulator. The novelty of this work consists in the use of GaSe lamellar as a buffer layer, this material has not been used at this part of solar cells before, which makes this new study interesting; we had also used a thin film (CIGS-P⁺), strongly doped type p as back surface field in order to obtain high performance. The solar cell is made up of two CIGS layers with different acceptors densities, one layer of Gallium selenide GaSe, and ITO anti-reflective layer. The role and impact of the CIGS-P⁺ layer as a back surface field on the performance of solar cells were investigated. To improve cell performance, the effects of thickness, carrier concentration, operating temperature, and resistors $R_s$ and $R_{\mathit{sh}}$ are explored. The carrier concentration as well as the thickness of the GaSe, CIGS absorber layer, and CIGS-P⁺ were shown to affect the cell's performance. The open circuit voltage of the simulated cell was increased to 309 mV after using CIGS-P⁺, the current density $J_{\mathit{sc}}$ up to 32.61 mA/cm², the Fill Factor FF up to 89.39%. After employing CIGS-P⁺ in a GaSe-based solar cell, an efficiency gains of roughly 10.06 % was recorded.

这项工作的目的是使用 SCAPS-1D 模拟器研究基于 GaSe 材料的太阳能电池的光伏性能。这项工作的新颖之处在于使用 GaSe 层状作为缓冲层，这种材料以前没有用于太阳能电池的这一部分，这使得这项新研究很有趣；我们还使用了薄膜 (CIGS-P ⁺ )，强掺杂 p 型作为背面场以获得高性能。太阳能电池由两个受主密度不同的CIGS层、一层硒化镓 GaSe和ITO抗反射层组成。CIGS-P ⁺的作用和影响层作为背面场对太阳能电池的性能进行了研究。为了提高电池性能，厚度、载流子浓度、工作温度和电阻的影响${\mathrm{电阻}}_{秒}$ 和 ${\mathrm{电阻}}_{\mathit{嘘}}$被探索。载流子浓度以及 GaSe、CIGS 吸收层和 CIGS-P ⁺的厚度会影响电池的性能。使用CIGS-P ⁺后，模拟电池的开路电压增加到309 mV ，电流密度$J_{\mathit{sc}}$高达 32.61 mA/cm ²，填充因子 FF 高达 89.39%。在基于 GaSe 的太阳能电池中使用 CIGS-P ⁺后，记录的效率提高了大约 10.06%。