Silver nanowire (AgNW) based transparent electrode (TE) plays a pivotal role in optoelectronics where TE is generally required to have fine pattern and high performance. Despite the rapid technological advances in either welding or patterning of AgNWs, there are few studies that combine the two processes in a simple and practical manner. Here, aiming to fabricate high-performance patterned AgNW TE, we develop a simplified photolithography that enables both plasmonic nanowelding with low-level UV exposure (20 mW/cm²) and high-resolution micropatterning without photoresist and etching process by conjugating AgNW with diphenyliodonium nitrate (DPIN) and UV-curable cellulose. The cellulose as a binder can effectively enhance plasmonic heating, adhesion, and stability, while the photosensitive DPIN, capable of modulating surface atom diffusion, can boost the plasmonic welding at AgNW junction and induce patterning in AgNW network with Plateau-Rayleigh instability. The fabricated AgNW TE has high figure of merit of up to 1, 000 (3.7 Ω/sq at 90% transmittance) and minimal pattern size down to 3 µm, along with superior robustness. Finally, a flexible smart window with high performance is demonstrated using the patterned and welded AgNW TEs, verifying the applicability of the simplified photolithography technique to optoelectronic devices.

基于银纳米线 (AgNW) 的透明电极 (TE) 在光电子学中起着举足轻重的作用，其中 TE 通常需要具有精细的图案和高性能。尽管在 AgNW 的焊接或图案化方面的技术进步很快，但很少有研究以简单实用的方式将这两种工艺结合起来。在这里，为了制造高性能的图案化 AgNW TE，我们开发了一种简化的光刻技术，使等离子体纳米焊接与低水平紫外线照射 (20 mW/cm ²) 以及通过将 AgNW 与硝酸二苯基碘 (DPIN) 和 UV 固化纤维素共轭，无需光刻胶和蚀刻工艺的高分辨率微图案化。纤维素作为粘合剂可以有效地增强等离子体加热、粘附和稳定性，而能够调节表面原子扩散的光敏 DPIN 可以促进 AgNW 结处的等离子体焊接，并在具有高原-瑞利不稳定性的 AgNW 网络中诱导图案化。制造的 AgNW TE 具有高达 1, 000（在 90% 透射率时为 3.7 Ω/sq）的高品质因数和低至 3 µm 的最小图案尺寸，以及卓越的稳健性。最后，使用图案化和焊接的 AgNW TE 展示了具有高性能的灵活智能窗口，验证了简化的光刻技术对光电器件的适用性。