Photoactive molecular junctions, based on 4 nm thick diarylethene (DAE) and 5 nm thick bisthienylbenzene (BTB) layers, were fabricated by electrochemical deposition. Total thickness was around 9 nm, that is, above the direct tunneling limit and in the hopping regime. The DAE units were switched between their open and closed forms. The DAE/BTB bilayer structure exhibits new electronic functions combining photoswitching and photorectification. The open form of DAE/BTB shows low conductance and asymmetric I–V curves while the closed form shows symmetric I–V curves and high conductance. More importantly, unprecedented ON/OFF current ratios of over 10 000 at 1 V were reproducibly measured.

中文翻译：

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光敏二芳基乙烯-双噻吩基苯分子结中前所未有的开/关比

通过电化学沉积制造基于 4 nm 厚二芳基乙烯 (DAE) 和 5 nm 厚双噻吩基苯 (BTB) 层的光敏分子结。总厚度约为 9 nm，即高于直接隧穿极限并处于跳跃状态。DAE 单元在其开放和封闭形式之间切换。DAE/BTB 双层结构展示了结合光开关和光整流的新电子功能。DAE/BTB 的开放形式显示低电导和不对称I - V曲线，而封闭形式显示对称I - V曲线和高电导。更重要的是，在 1 V 电压下，前所未有的超过 10 000 的开/关电流比得到了可重复测量。