Ge₂₅Se₇₅ chalcogenide films have been prepared using thermal evaporation method. X-ray diffraction (XRD) analysis shows polycrystalline natureof the annealed Ge₂₅Se₇₅ chalcogenide films at 340 °C. The significant transmittance of Ge₂₅Se₇₅ films at 1000 nm suggested the using of this material as an effective color filters. The indirect transition is the adopted mechanism of the electron transition for the as-deposited and the annealed Ge₂₅Se₇₅ films. The optical band gap energy $\left(E_g\right)$was found to be increased as the annealing temperature increases. In the regime of the normal dispersion, the single oscillating energy$\left(E_0\right)$, the dispersion energy $\left(E_d\right)$ values and the dielectric constant $\left({\epsilon }_{\infty }\right)$for the as-prepared and annealed films were calculated. In the transparent region, the lattice dielectric constant $\left({\epsilon }_L\right)$ was found to be decreased as the annealing temperature increases. Moreover, the measurements of the nonlinear optical parameters of these films at different annealing temperatures verify the possible using of thischalcogenide glass as a promised candidate material for optical applications.

Ge ₂₅ Se ₇₅硫族化物薄膜已使用热蒸发方法制备。X 射线衍射 (XRD) 分析显示在 340 °C 下退火的 Ge ₂₅ Se ₇₅硫族化物薄膜的多晶性质。Ge ₂₅ Se ₇₅薄膜在 1000 nm 处的显着透射率表明该材料可用作有效的滤色器。间接跃迁是沉积态和退火态的 Ge ₂₅ Se ₇₅薄膜所采用的电子跃迁机制。光学带隙能量$\left({乙}_G\right)$发现随着退火温度的升高而增加。在正常色散状态下，单个振荡能量$\left({乙}_0\right)$, 色散能 $\left({乙}_d\right)$ 值和介电常数 $\left({\epsilon }_{\infty }\right)$对制备的和退火的薄膜进行计算。在透明区域，晶格介电常数$\left({\epsilon }_{升}\right)$发现随着退火温度的升高而降低。此外，这些薄膜在不同退火温度下的非线性光学参数的测量验证了使用这种硫属化物玻璃作为光学应用的候选材料的可能性。