Large array devices are often used for big current driving capabilities in power electronic integrated circuit (IC) applications. Since these structures have big sizes, typical electrostatic discharge protection methodologies cannot be applied in such kind of IC. Otherwise, IC will become too huge to marketing. In this paper, a novel signal control switching architecture for adding large array devices' ESD performances is proposed. Only a little layout area is increased, but a huge electrostatic discharge robustness improvement can be obtained. Moreover, electrical safe operation area characteristics of large array devices are also improved very much with this new scheme. This study is processed in 0.15 μm Bipolar CMOS DMOS (BCD) with silicide technologies.

大阵列器件通常用于电力电子集成电路 (IC) 应用中的大电流驱动能力。由于这些结构尺寸较大，典型的静电放电保护方法无法应用于此类 IC。否则，IC将变得太大而无法营销。在本文中，提出了一种用于增加大型阵列器件的 ESD 性能的新型信号控制开关架构。仅增加了很少的布局面积，但可以获得巨大的静电放电鲁棒性改进。此外，通过这种新方案，大阵列器件的电气安全工作区特性也得到了很大的改善。本研究采用硅化物技术在 0.15 μm 双极 CMOS DMOS (BCD) 中进行处理。