Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, and desorption mechanisms that govern the growth rates of SAG nanowire (NW) arrays. We propose a model for the crystal growth rates that considers two parameter groups: the crystal growth control parameters and the design parameters. Using GaAs and InGaAs SAG NWs as a platform, we show how the design parameters such as NW pitch, width, and orientation have an impact on the growth rates. We demonstrate that by varying the control parameters (i.e., substrate temperature and beam fluxes) source, balance, and sink growth modes may exist in the SAG selectivity window. Using this model, we show that inhomogeneous growth rates can be compensated by tuning the design parameters.

中文翻译：

---

III-V 族纳米线的选择性区域生长率

半导体的选择性区域生长 (SAG) 是一种用于制造门控量子平台的可扩展方法。这封信报告了控制 SAG 纳米线 (NW) 阵列生长速率的吸附原子扩散、掺入和解吸机制。我们提出了一个考虑两个参数组的晶体生长速率模型：晶体生长控制参数和设计参数。使用 GaAs 和 InGaAs SAG NW 作为平台，我们展示了 NW 间距、宽度和方向等设计参数如何影响生长速率。我们证明，通过改变控制参数（即基板温度和光束通量），SAG 选择性窗口中可能存在源、平衡和汇生长模式。使用该模型，我们表明可以通过调整设计参数来补偿不均匀的增长率。