Abstract—

This work is devoted to the thermal treatment effect peculiarities on the electric and thermoelectric characteristics of silicon crystals doped with a phosphorus impurity using nuclear transmutation and (for comparison) common metallurgical methods. It was found that, to obtain optimal values of the thermoelectric figure of merit Z_a in n-Si crystals doped by the method of the nuclear transmutation, they must be annealed at 1100–1200°С for 2 h, whereas the annealing of the same duration, but at lower temperatures, has to be used for ordinary n-Si crystals. In both cases, higher values of the thermoelectric figure of merit were obtained at cooling the crystals from the annealing temperature to room temperature at a rate of 1°С/min.

中文翻译：

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热处理对核嬗变掺杂硅的热电性能因数的影响

摘要-

这项工作致力于使用核嬗变和（作为比较）常用冶金方法对掺杂磷杂质的硅晶体的电和热电特性的热处理效应特性。据发现，为了获得优点的热电的最佳值ž_一个在Ñ由核嬗变的方法掺杂-Si晶体，它们必须在1100至1200年°С进行退火2小时，而的退火相同的持续时间，但在较低的温度下，必须用于普通的n- Si 晶体。在这两种情况下，在以 1°С/min 的速率将晶体从退火温度冷却到室温时，获得了更高的热电品质因数值。