To improve the performance of intermediate-temperature solid oxide electrolysis cells (IT-SOECs) based on the Ce_0.85Sm_0.15O_2-δ (SDC) interlayer, a transition metal oxide (CuO) was added to the interlayer to enhance its oxygen ion conduction, and thereby, reduce the oxygen electrode polarization resistance of the SOEC. The performance of SOECs based on the SDC–CuO interlayers was studied. The experimental results showed that SDC–CuO interlayers sintered for 10 h at 1050 °C, 1075 °C, and 1100 °C (referred to as SDC–CuO-1050, SDC–CuO-1075, and SDC–CuO-1100, respectively) are highly dense. This indicates that the preparation temperature of a dense SDC interlayer can be reduced by compositing it with CuO. The performances of SOECs based on the SDC–CuO-1050, SDC–CuO-1075, and SDC–CuO-1100 interlayers were higher than that of the SOEC based on the SDC interlayer. This indicates that oxygen ions can move faster from the SDC–CuO-1050, SDC–CuO-1075, and SDC–CuO-1100 interlayers to the oxygen electrode to participate in the electrochemical reaction. This reduces the polarization resistance of oxygen electrodes and improves the performance of the SOECs. The performance of the SOEC based on the SDC–CuO-1050 interlayer is the highest, indicating that sintering at 1050 °C for 10 h is the best condition to prepare high-performance SDC–CuO interlayers. Thus, this study provides an effective method for improving the performance of IT-SOEC based on SDC interlayer.

提高基于 Ce _0.85 Sm _0.15 O _{2-δ 的中}温固体氧化物电解槽 (IT-SOECs) 的性能(SDC) 中间层，在中间层中加入过渡金属氧化物 (CuO) 以增强其氧离子传导，从而降低 SOEC 的氧电极极化电阻。研究了基于 SDC-CuO 中间层的 SOEC 的性能。实验结果表明，SDC-CuO 夹层在 1050 °C、1075 °C 和 1100 °C 下烧结 10 h（分别称为 SDC-CuO-1050、SDC-CuO-1075 和 SDC-CuO-1100） ) 是高密度的。这表明通过与 CuO 复合可以降低致密 SDC 中间层的制备温度。基于 SDC-CuO-1050、SDC-CuO-1075 和 SDC-CuO-1100 中间层的 SOEC 的性能高于基于 SDC 中间层的 SOEC。这表明氧离子可以更快地从 SDC-CuO-1050、SDC-CuO-1075、和 SDC-CuO-1100 夹层到氧电极以参与电化学反应。这降低了氧电极的极化电阻并提高了 SOEC 的性能。基于 SDC-CuO-1050 中间层的 SOEC 的性能最高，表明在 1050 °C 下烧结 10 小时是制备高性能 SDC-CuO 中间层的最佳条件。因此，本研究为提高基于SDC中间层的IT-SOEC的性能提供了一种有效的方法。表明在 1050°C 下烧结 10 小时是制备高性能 SDC-CuO 夹层的最佳条件。因此，本研究为提高基于SDC中间层的IT-SOEC的性能提供了一种有效的方法。表明在 1050°C 下烧结 10 小时是制备高性能 SDC-CuO 夹层的最佳条件。因此，本研究为提高基于SDC中间层的IT-SOEC的性能提供了一种有效的方法。