In this work, we have prepared Co₃O₄ thin films for different doping level including 0, 2, 4, and 6 wt% by JNSP method and analyzed their structural, morphological, optical, and electrical properties by XRD, FE-SEM, EDX, UV-Vis, and current-voltage (I-V) characteristics. The XRD profiles confirm the cubic crystal structures of Sn doped Co₃O₄ films. Spherical-like grains are observed from the FE-SEM images and were suppressed due to Sn doping. Also, the elements like Sn, Co, and O were confirmed by EDX analysis. The optical band gap of Co₃O₄ film is noticed to be increased after adding Sn ions, which has been studied through UV-Vis spectroscopy. Most importantly, we have fabricated an undoped and Sn doped p-Co₃O₄/n-Si junction diode for various concentrations. The determined ideality factor of the p-Sn doped Co₃O₄/n-Si diodes were reduced for both under dark and light conditions. In addition, the calculated responsivity, quantum efficiency, and specific detectivity of the diodes were enhanced with forwarded voltage. The p-Sn@Co₃O₄/n-Si diode fabricated with 2 wt% was achieved maximum responsivity and quantum efficiency of R = 247.03 mA/W, QE = 95.7%, and D* = 2.84 $\times$10¹⁰ at 3 V. We observed that the p-Sn doped Co₃O₄/n-Si diodes are highly sensitive and appropriate for photo-detection applications.

在这项工作中，我们通过 JNSP 方法制备了不同掺杂水平的Co ₃ O ₄薄膜，包括 0、2、4 和 6 wt%，并通过 XRD、FE-SEM、 EDX、UV-Vis 和电流-电压 (IV) 特性。XRD图谱证实了Sn掺杂的Co ₃ O ₄膜的立方晶体结构。从 FE-SEM 图像中观察到类球形晶粒，并且由于 Sn 掺杂而受到抑制。此外，通过 EDX 分析确认了 Sn、Co 和 O 等元素。Co ₃ O ₄的光学带隙通过紫外-可见光谱研究发现添加 Sn 离子后薄膜增加。最重要的是，我们制造了各种浓度的未掺杂和掺杂 Sn 的 p-Co ₃ O ₄ /n-Si 结二极管。p-Sn 掺杂的 Co ₃ O ₄ /n-Si 二极管的确定理想因子在暗和亮条件下均降低。此外，二极管的计算响应率、量子效率和比检测率随着正向电压的增加而增强。用 2 wt% 制造的 p-Sn@Co ₃ O ₄ /n-Si 二极管实现了最大响应率和量子效率，R = 247.03 mA/W，QE = 95.7%，D* = 2.84$\times$10 ¹⁰在 3 V。我们观察到 p-Sn 掺杂的 Co ₃ O ₄ /n-Si 二极管非常灵敏，适用于光电检测应用。