In this study, an electrostatically induced quantum confinement structure, so-called quantum point contact, has been realized in a p-type trilayer tungsten diselenide-based van der Waals heterostructure with modified van der Waals contact method with degenerately doped transition metal dichalcogenide crystals. Clear quantized conductance and pinch-off state through the one-dimensional confinement were observed by dual-gating of split gate electrodes and top gate. Conductance plateaus were observed at a step of e²/h in addition to quarter plateaus such as 0.25 × 2e²/h at a finite bias voltage condition indicating the signature of intrinsic spin-polarized quantum point contact.

中文翻译：

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p型三层WSe2范德华异质结构中自旋分辨量子点接触的特征

在这项研究中，静电诱导的量子限制结构，即所谓的量子点接触，已经在基于 p 型三层钨二硒化物的范德华异质结构中实现，采用改进的范德华接触方法和简并掺杂的过渡金属二硫属化物晶体。通过分裂栅电极和顶栅的双门控，通过一维限制观察到清晰的量子化电导和夹断状态。除了在有限偏置电压条件下的0.25 × 2 e ² / h等四分之一平台之外，还观察到电导平台在e ² / h的步长处，表明本征自旋极化量子点接触的特征。