Two-dimensional (2D) materials have expansive application prospects in electronics and optoelectronics devices due to their unique physical and chemical properties. 2D layered materials are easy to prepare due to the layered crystal structure and the interlayer van der Waals combination. However, the 2D nonlayered materials are difficult to prepare due to the nonlayered crystal structure and the combination of interlayer isotropic chemical bonds, resulting in limited research on 2D nonlayered materials with broad characteristics. Here, a 2D nonlayered NiSe material has been synthesized by a chemical vapor deposition method. The atomic force microscopy study shows that the grown NiSe with a thin thickness. Energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscopy results demonstrate the uniformity and high quality of NiSe flakes. The NiSe based photodetector realizes the laser response to 830 nm and 10.6 μm and the maximum responsivity is ~6.96 A/W at room temperature. This work lays the foundation for the preparation of 2D nonlayered materials and expands the application of 2D nonlayered materials in optoelectronics fields.

中文翻译：

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CVD 生长的 2D 非层状 NiSe 作为宽带光电探测器

二维（2D）材料由于其独特的物理和化学性质，在电子和光电子器件中具有广阔的应用前景。由于层状晶体结构和层间范德瓦尔斯组合，二维层状材料易于制备。然而，二维非层状材料由于非层状晶体结构和层间各向同性化学键的组合而难以制备，导致对具有广泛特性的二维非层状材料的研究有限。在这里，通过化学气相沉积方法合成了 2D 非层状 NiSe 材料。原子力显微镜研究表明，生长的 NiSe 具有较薄的厚度。能量色散 X 射线光谱仪，X 射线光电子能谱和透射电子显微镜结果证明 NiSe 薄片的均匀性和高质量。基于 NiSe 的光电探测器实现了对 830 nm 和 10.6 μm 的激光响应，室温下的最大响应率为 ~6.96 A/W。该工作为二维非层状材料的制备奠定了基础，拓展了二维非层状材料在光电子领域的应用。