Abstract

We have synthesized a thermally curable polymeric gate insulator (TFVOB-SPI) through the modification of soluble polyimide (SPI) using a 4-(1,2,2-trifluorovinyloxy)benzoyl (TFVOB) chloride. The thermal cross-linking of TFVOB-SPI was done and prepared the cross-linked TFVOB-SPI thin film having the perfluorocyclobutane (PFCB) structure. The PFCB structure was formed by the radical mediated thermal cycloaddition of trifluorovinyl ether of TFVOB. The cross-linked TFVOB-SPI showed excellent thermal stability up to 495 °C with only 5% weight loss and excellent chemical resistance to common organic solvents. The pentacene thin-film transistor (TFT) with the cross-linked TFVOB-SPI as a gate dielectric exhibited a field effect mobility of 0.28 cm²/Vs with almost no hysteresis during the TFT operation.

摘要

我们通过使用 4-(1,2,2-三氟乙烯氧基)苯甲酰 (TFVOB) 氯化物对可溶性聚酰亚胺 (SPI) 进行改性，合成了一种可热固化的聚合物栅极绝缘体 (TFVOB-SPI)。对TFVOB-SPI进行热交联，制备出具有全氟环丁烷(PFCB)结构的交联TFVOB-SPI薄膜。PFCB结构是由TFVOB的三氟乙烯基醚自由基介导的热环加成形成的。交联的 TFVOB-SPI 在高达 495 °C 的温度下表现出出色的热稳定性，重量损失仅为 5%，并且对常见有机溶剂具有出色的耐化学性。以交联的 TFVOB-SPI 作为栅极电介质的并五苯薄膜晶体管 (TFT) 在 TFT 工作期间表现出 0.28 cm ² /Vs 的场效应迁移率，几乎没有滞后现象。