当前位置:
X-MOL 学术
›
ACS Appl. Electron. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Oxygen Defect Stability in Amorphous, C-Axis Aligned, and Spinel IGZO
ACS Applied Electronic Materials ( IF 4.7 ) Pub Date : 2021-09-01 , DOI: 10.1021/acsaelm.1c00553 Michiel J. van Setten 1, 2 , Harold F. W. Dekkers 1 , Luka Kljucar 1 , Jerome Mitard 1 , Christopher Pashartis 1 , Subhali Subhechha 1 , Nouredine Rassoul 1 , Romain Delhougne 1 , Gouri S. Kar 1 , Geoffrey Pourtois 1
ACS Applied Electronic Materials ( IF 4.7 ) Pub Date : 2021-09-01 , DOI: 10.1021/acsaelm.1c00553 Michiel J. van Setten 1, 2 , Harold F. W. Dekkers 1 , Luka Kljucar 1 , Jerome Mitard 1 , Christopher Pashartis 1 , Subhali Subhechha 1 , Nouredine Rassoul 1 , Romain Delhougne 1 , Gouri S. Kar 1 , Geoffrey Pourtois 1
Affiliation
Good control of the doping concentration and profile in the active layer of a transistor is paramount to achieve optimal device reliability and electrical performance. For nonconventional semiconductors such as InGaZnO4 (IGZO), the doping mechanisms and the factors impacting them need to be rediscovered to achieve this control. In IGZO, an important doping mechanism is the formation of oxygen defects. In this work, we map the stability of oxygen defects in IGZO as a function of the defect concentration for three different phases: amorphous, C-axis aligned, and spinel IGZO. By means of a detailed analysis of the evolution of the metal coordination in the three phases, we rationalize the observed similarities and differences. This insight enables us to estimate the doping concentration caused by oxygen scavenging by different contact metals, liner materials, and hydrogen sources introduced during the integration of the material in a transistor flow. From a study of the contact resistance in the Ohmic, high carrier density contact regime, we obtain a lower bound to the contact resistance. We learn that the different carrier concentrations, caused by the variations in oxygen scavenging between contact metals, have a larger impact than the direct difference in contact resistance caused by the intrinsic electronic properties of metals.
中文翻译:
无定形、C 轴对齐和尖晶石 IGZO 中的氧缺陷稳定性
晶体管有源层中掺杂浓度和分布的良好控制对于实现最佳器件可靠性和电气性能至关重要。对于非常规半导体,如 InGaZnO 4 (IGZO),需要重新发现掺杂机制和影响它们的因素以实现这种控制。在 IGZO 中,一个重要的掺杂机制是氧缺陷的形成。在这项工作中,我们将 IGZO 中氧缺陷的稳定性映射为三个不同相的缺陷浓度的函数:非晶态、C-轴对齐,和尖晶石 IGZO。通过对三个阶段金属配位演变的详细分析,我们合理化了观察到的异同。这一见解使我们能够估计由不同接触金属、衬里材料和在晶体管流程中引入的氢源清除氧引起的掺杂浓度。通过对欧姆、高载流子密度接触方式中的接触电阻的研究,我们获得了接触电阻的下限。我们了解到,由接触金属之间氧清除的变化引起的不同载流子浓度比由金属的固有电子特性引起的接触电阻的直接差异具有更大的影响。
更新日期:2021-09-28
中文翻译:
无定形、C 轴对齐和尖晶石 IGZO 中的氧缺陷稳定性
晶体管有源层中掺杂浓度和分布的良好控制对于实现最佳器件可靠性和电气性能至关重要。对于非常规半导体,如 InGaZnO 4 (IGZO),需要重新发现掺杂机制和影响它们的因素以实现这种控制。在 IGZO 中,一个重要的掺杂机制是氧缺陷的形成。在这项工作中,我们将 IGZO 中氧缺陷的稳定性映射为三个不同相的缺陷浓度的函数:非晶态、C-轴对齐,和尖晶石 IGZO。通过对三个阶段金属配位演变的详细分析,我们合理化了观察到的异同。这一见解使我们能够估计由不同接触金属、衬里材料和在晶体管流程中引入的氢源清除氧引起的掺杂浓度。通过对欧姆、高载流子密度接触方式中的接触电阻的研究,我们获得了接触电阻的下限。我们了解到,由接触金属之间氧清除的变化引起的不同载流子浓度比由金属的固有电子特性引起的接触电阻的直接差异具有更大的影响。