Hexagonal boron nitride crystalline film with a thickness of 70 μm is deposited on a c-plane sapphire at 1700 °C by the chemical vapor deposition (CVD) method. In X-ray diffraction (XRD) characterizations, a peak of (002) is observed at 26.01° with the full width at half-maximum (FWHM) of 1.17°, and the c-axis lattice constant is estimated to be 6.84 Å. The characterization results of Raman and X-ray photoelectron spectroscopy further confirm the film’s high quality. Based on the h-BN film, a vacuum ultraviolet (VUV) photodetector is further fabricated with a responsivity of 48.7 μA/W, exhibiting a photo-to-dark current ratio (PDCR) of more than 10³ as well as an excellent spectral selectivity to short-wave ultraviolet irradiation. By analyzing the photoresponse process, the influence of different response mechanisms is explained, implying the photodetector’s ability to respond quickly.

中文翻译：

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用于真空紫外光电检测的微米厚六方氮化硼结晶膜，具有更高的灵敏度和光谱响应

通过化学气相沉积（CVD）方法在 1700 °C 下在 c 面蓝宝石上沉积 70 μm 厚的六方氮化硼晶体薄膜。在 X 射线衍射 (XRD) 表征中，在 26.01° 处观察到 (002) 峰，半峰全宽 (FWHM) 为 1.17°，估计 c 轴晶格常数为 6.84 Å。拉曼和 X 射线光电子能谱的表征结果进一步证实了薄膜的高质量。在 h-BN 薄膜的基础上，进一步制造了响应度为 48.7 μA/W、光暗电流比（PDCR）超过 10 ³的真空紫外（VUV）光电探测器。以及对短波紫外线照射的出色光谱选择性。通过分析光响应过程，解释了不同响应机制的影响，暗示了光电探测器快速响应的能力。