The transient photoconductivity of as-deposited and annealed in air 0.27 at.% silver-doped zinc oxide films (Ag:ZnO) coated on sapphire substrates by e-beam evaporation method was measured in the dark (σ_d) and under light from a solar simulator (σ_ph) at temperatures 8, 12, and 32 °C. In comparison with as-deposited Ag:ZnO film, the annealed film exhibits lower photoresponse which decreases and becomes slower as the temperature increases from 8 to 32 °C. The ln σ_d versus 1/T plots of the as-deposited and annealed samples revealed thermally-activated process in the range of 5–60 °C for σ_d with an activation energy of 1.4 eV and 0.8 eV, respectively. Furthermore, σ_d and σ_ph were measured in the frequency range of 10–35 × 10⁶ s⁻¹ at room temperature. σ_d of the as-deposited film is frequency independent, while σ_d of the annealed film exhibits two different conduction mechanisms; one dominates in the low-frequency region as conduction via delocalized states, and the other is the polaron mechanism, which is activated at higher frequencies (ω > 190 × 10³ s⁻¹). The frequency dependences of σ_ph of the as-deposited and annealed films obey the Drude model of conductivity.

通过电子束蒸发法涂覆在蓝宝石衬底上的 0.27 at.% 掺银氧化锌膜 (Ag:ZnO) 在空气中沉积和退火的瞬态光电导率在黑暗 ( σ _d ) 和来自温度为_8、12和 32 °C 的太阳模拟器 ( σ _ph )。与沉积时的 Ag:ZnO 薄膜相比，退火薄膜表现出较低的光响应，随着温度从 8°C 增加到 32°C，这种光响应会降低并变得更慢。沉积态和退火态样品的 ln σ _d与 1/ T曲线图显示σ _d在 5–60 °C 范围内的热激活过程活化能分别为 1.4 eV 和 0.8 eV。此外，在室温下在10–35 × 10 ⁶  s ^-1的频率范围内测量了σ _d和σ _ph。σ _d的所沉积的膜是与频率无关的，而σ _d退火膜表现出两种不同的传导机制; 一种在低频区域通过离域状态作为传导占主导地位，另一种是极化子机制，它在较高频率下被激活（ω  > 190 × 10 ³  s ^-1）。σ _ph的频率相关性 沉积态和退火态的薄膜遵循德鲁德电导率模型。