The n-type doping of diamond is quite difficult, hindering the development of diamond-based electronic devices for decades. In this work, we have designed a boron–nitrogen co-doping technique to realize n-type diamonds. Basically, the activation energy of the donors has been greatly reduced by around 50%, thanks to the successful synthesis of the boron–nitrogen related donor-like complex by a fine control of the synthesis condition. Compared to the sole nitrogen doping scheme, it is found that the co-incorporation of boron elements is beneficial to a lot of aspects, including better crystalline quality, faster growth, higher nitrogen solubility, and stability. With the technique, a p-i-n diamond homojunction has been fabricated. A clear rectification behavior has been recorded, demonstrating that the current co-doping technique we proposed is a feasible path to the accessible n-type diamond.

中文翻译：

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可及 n 型金刚石的硼掺杂行为的氮调制

金刚石的 n 型掺杂相当困难，几十年来阻碍了基于金刚石的电子器件的发展。在这项工作中，我们设计了一种硼氮共掺杂技术来实现 n 型金刚石。基本上，由于通过精细控制合成条件成功合成了硼氮相关的类供体复合物，供体的活化能已大大降低了约50％。与单独的氮掺杂方案相比，发现硼元素的共同掺入有很多方面的好处，包括更好的结晶质量、更快的生长、更高的氮溶解度和稳定性。使用该技术，已制造出针状金刚石同质结。已记录明确整改行为，