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Narrow-Band AlGaN-Based UVB Light-Emitting Diodes
ACS Applied Electronic Materials ( IF 4.7 ) Pub Date : 2021-08-31 , DOI: 10.1021/acsaelm.1c00593
Tsung-Yen Liu, Shih-Ming Huang, Mu-Jen Lai, Rui-Sen Liu, Xiong Zhang, Yi-Tsung Chang, Lin-Jun Zhang, Ray-Ming Lin

This paper reports an AlGaN-based narrow-band ultraviolet-B (NB-UVB) light-emitting diode (LED) exhibiting a single electroluminescence peak with a full-width at half-maximum (FWHM) of less than 10 nm at forward currents (If) from 10 to 200 mA, broadening to 11.6 nm when the forward current reached 350 mA. We attribute the narrow FWHM to effectively decreasing the degrees of piezoelectric polarization in the MQWs, and the excess electron overflow from the MQW to the p-layer was avoided. The maximum external quantum efficiency (EQE) of 2.16% and wall plug efficiency of 1.74% occurred when the forward current was 10 mA; the EQE dropped by 8.6% when the forward current increased from 10 to 60 mA. Furthermore, the light output power decreased to 85.4 and 82.5% of its initial value after 620 and 3500 h, respectively, under conditions of 60 mA dc aging. The characteristics of this NB-UVB LED suggest great potential for its application in phototherapy.

中文翻译:

基于窄带 AlGaN 的 UVB 发光二极管

本文报道了一种基于 AlGaN 的窄带紫外-B (NB-UVB) 发光二极管 (LED),其在正向电流下具有小于 10 nm 的半高全宽 (FWHM) 的单个电致发光峰(f) 从 10 到 200 mA,当正向电流达到 350 mA 时展宽到 11.6 nm。我们将窄 FWHM 归因于有效降低 MQW 中的压电极化程度,并且避免了从 MQW 到 p 层的过量电子溢出。当正向电流为10 mA时,最大外量子效率(EQE)为2.16%,壁插效率为1.74%;当正向电流从 10 mA 增加到 60 mA 时,EQE 下降了 8.6%。此外,在 60 mA dc 老化条件下,620 小时和 3500 小时后光输出功率分别下降到其初始值的 85.4% 和 82.5%。这种 NB-UVB LED 的特性表明其在光疗中的应用潜力巨大。
更新日期:2021-09-28
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