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Impact of hydrogen on the boron-oxygen-related lifetime degradation and regeneration kinetics in crystalline silicon
Solar Energy Materials and Solar Cells ( IF 6.9 ) Pub Date : 2021-08-30 , DOI: 10.1016/j.solmat.2021.111340
Lailah Helmich , Dominic C. Walter , Robert Falster , Vladimir V. Voronkov , Jan Schmidt

We examine the impact of hydrogen on the boron-oxygen-related lifetime degradation and regeneration kinetics in boron-doped p-type Czochralski-grown silicon wafers. We introduce the hydrogen into the silicon bulk by rapid thermal annealing. The hydrogen source are hydrogen-rich silicon nitride (SiNx:H) layers. Aluminum oxide (Al2O3) layers of varying thickness are placed in-between the silicon wafer surfaces and the SiNx:H layers. By varying the Al2O3 thickness, which acts as an effective hydrogen diffusion barrier, the hydrogen bulk content is varied over more than one order of magnitude. The hydrogen content is determined from measured wafer resistivity changes. In order to examine the impact of hydrogen on the degradation kinetics, all samples are illuminated at a light intensity of 0.1 suns near room temperature. We observe no impact of the in-diffused hydrogen content on the degradation rate constant, confirming that hydrogen is not involved in the boron-oxygen degradation mechanism. The regeneration experiments at 160°C and 1 sun, however, show a clear dependence on the hydrogen content with a linear increase of the regeneration rate constant with increasing bulk hydrogen concentration. However, extrapolation of our measurements toward a zero in-diffused hydrogen content shows that the regeneration is still working even without any in-diffused hydrogen. Hence, our measurements demonstrate that there are two distinct regeneration processes taking place. This is in good agreement with a recently proposed defect reaction model and is also in agreement with the finding that the permanent boron-oxygen deactivation also works on non-fired solar cells, though at a lower rate.



中文翻译:

氢对晶体硅中硼氧相关寿命退化和再生动力学的影响

我们研究了氢对硼掺杂p型直拉生长硅晶片中与硼氧相关的寿命退化和再生动力学的影响。我们通过快速热退火将氢引入硅块中。氢源是富氢氮化硅 (SiN x :H) 层。不同厚度的氧化铝(Al 2 O 3)层放置在硅晶片表面和SiN x :H 层之间。通过改变 Al 2 O 3厚度作为有效的氢扩散屏障,氢的整体含量变化超过一个数量级。氢含量由测量的晶片电阻率变化确定。为了检查氢对降解动力学的影响,所有样品都在接近室温的 0.1 太阳光强度下照射。我们观察到扩散氢含量对降解速率常数没有影响,证实氢不参与硼氧降解机制。然而,在 160°C 和 1sun 下的再生实验表明,随着整体氢浓度的增加,再生速率常数线性增加,这对氢含量有明显的依赖性。然而,将我们的测量结果外推到零扩散氢含量表明,即使没有任何扩散氢,再生仍在进行。因此,我们的测量表明发生了两个不同的再生过程。这与最近提出的缺陷反应模型非常一致,也与永久硼氧失活也适用于非燃烧太阳能电池的发现一致,尽管速率较低。

更新日期:2021-08-31
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