The paper presents the results of irradiation of the triple junction solar cell (SC) based on perspective InGaP/InGaAs/Ge semiconductor structure with Ge-substrate by electrons, neutrons and gamma-rays. The electrical and spectral characteristics of the SC were investigated before and after each stage of irradiation. Results show that degradation curves obtained with different types of radiation sources collapse to a single characteristic curve, if they are presented as dependences on displacement damage doses (DDD). It can be considered as the basis for prediction of SC lifetime in space radiation conditions. The proposed methodology develops NRL method. Paper also presents the degradation of each subcell from SC and shows that the InGaAs subcell is the most vulnerable to irradiation due to SC design features.

本文介绍了基于透视 InGaP/InGaAs/Ge 半导体结构和 Ge 衬底的三结太阳能电池 (SC) 被电子、中子和伽马射线照射的结果。在每个辐照阶段之前和之后研究了 SC 的电学和光谱特性。结果表明，如果用不同类型的辐射源获得的退化曲线与位移损伤剂量 (DDD) 相关，则它们会坍缩成一条特性曲线。它可以被认为是空间辐射条件下SC寿命预测的基础。所提出的方法开发了 NRL 方法。论文还介绍了 SC 对每个子电池的退化，并表明 InGaAs 子电池由于 SC 设计特征而最容易受到辐射。