In this study, CZTS thin films were fabricated by sputtering a single quaternary target followed by a sulfurization process, the compositional disparity in the sputtered films and sulfurized samples at different argon flow rates was investigated by EDX. The prepared CZTS thin films are then characterized by XRD, Raman scattering, SEM, and UV–Vis spectroscopy. It shows that the CZTS thin film deposited at an Ar flow rate of 300 sccm has the most Cu-poor and Zn-rich composition and the highest level of crystallization. Fewer voids are also observed in the film sputtered at 300 sccm of flow rate and the band gap energy of fabricated CZTS thin film is around 1.5 eV. These results indicate that compositional variation in the sputtered CZTS thin films controlled by the Ar flow rate has a significant impact on the properties of sulfurized CZTS thin films.

在这项研究中，CZTS 薄膜是通过溅射单个四元靶然后进行硫化工艺制备的，通过 EDX 研究了不同氩气流速下溅射薄膜和硫化样品的成分差异。然后通过 XRD、拉曼散射、SEM 和 UV-Vis 光谱对制备的 CZTS 薄膜进行表征。结果表明，以 300 sccm 的 Ar 流速沉积的 CZTS 薄膜具有最贫铜和最富锌的成分以及最高水平的结晶。在以 300 sccm 的流速溅射的薄膜中也观察到较少的空隙，制造的 CZTS 薄膜的带隙能量约为 1.5 eV。这些结果表明，受 Ar 流量控制的溅射 CZTS 薄膜的成分变化对硫化 CZTS 薄膜的性能有显着影响。