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Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO
Nano Letters ( IF 10.8 ) Pub Date : 2021-08-30 , DOI: 10.1021/acs.nanolett.1c02322
Rong Zhang 1 , Antimo Marrazzo 1, 2 , Matthieu Jean Verstraete 3 , Nicola Marzari 1 , Thibault Daniel Pierre Sohier 1, 3
Affiliation  

A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to kR = 0.08 Å–1), leading to a π/2 rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.

中文翻译:

自旋层锁定 FET 的栅极控制及其在单层 LuIO 中的应用

最近的 2D 自旋FET 概念提出在具有强烈和相反的本征 Rashba 效应的两个独立子层之间进行静电切换,利用具有局部偶极场的中心对称材料中的自旋层锁定机制。在这里,我们提出了该家族中的一种新型单层材料,即碘化镥(LuIO)。它显示了 2D 材料中最大的 Rashba 效果之一(高达k R = 0.08 Å –1),导致自旋的 π/2 旋转仅超过 1 nm。预计单层可从其实验已知的 3D 块体对应物剥离,结合能低于石墨烯。我们表征并模拟了这些器件的两个门控参数的相互作用:掺杂和自旋通道选择。我们表明,在能量中分裂自旋通道的能力会随着掺杂而减弱,从而产生可适用于所有基于自旋层锁定的器件的特定栅极操作指南。
更新日期:2021-09-22
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