DNA origami-assembled metal–semiconductor junctions have been formed as a step toward application of these nanomaterials in nanoelectronics. Previously, techniques such as electroless plating, electrochemical deposition, or photochemical reduction have been used to connect metal and semiconductor nanomaterials into desired patterns on DNA templates. To improve over prior work and provide a more general framework for the creation of electronic nanodevices as an alternative nanofabrication step, we have developed a method to connect gold (Au) and tellurium (Te) nanorods on a single DNA origami template without electroplating by annealing after coating with a heat-resistant polymer. Bar DNA origami templates (17 nm × 410 nm) were seeded site-specifically with Au and Te nanorods in an alternating manner. These templates were then coated with a polymer and annealed at different temperatures. At 170 °C, the Au and Te nanorods were best connected, and we hypothesize that the junctions were established primarily due to the atomic mobility of gold. Electrical characterization of these Au/Te/Au assemblies revealed some nonlinear current–voltage curves, as well as linear plots that are explained. This annealing method and the metal–semiconductor nanomaterials that are formed simply through controlled seeding and annealing on DNA origami templates have potential to yield complex nanoelectronic devices in the future.

中文翻译：

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DNA 折纸成型金属-半导体纳米线上聚合物包裹纳米棒的退火：对纳米电子学的影响

DNA折纸组装的金属-半导体结已经形成，作为这些纳米材料在纳米电子学中应用的一步。以前，化学镀、电化学沉积或光化学还原等技术已被用于将金属和半导体纳米材料连接成 DNA 模板上所需的图案。为了改进先前的工作并为作为替代纳米制造步骤的电子纳米器件的创建提供更通用的框架，我们开发了一种将金 (Au) 和碲 (Te) 纳米棒连接到单个 DNA 折纸模板上的方法，无需通过退火电镀涂上耐热聚合物后。Bar DNA 折纸模板（17 nm × 410 nm）以交替方式用 Au 和 Te 纳米棒定点接种。然后将这些模板涂上聚合物并在不同温度下退火。在 170 °C 时，Au 和 Te 纳米棒连接得最好，我们假设连接的建立主要是由于金的原子迁移率。这些 Au/Te/Au 组件的电气特性揭示了一些非线性电流 - 电压曲线，以及解释的线性图。这种退火方法和通过在 DNA 折纸模板上的受控播种和退火简单形成的金属-半导体纳米材料有可能在未来产生复杂的纳米电子器件。这些 Au/Te/Au 组件的电气特性揭示了一些非线性电流 - 电压曲线，以及解释的线性图。这种退火方法和通过在 DNA 折纸模板上的受控播种和退火简单形成的金属-半导体纳米材料有可能在未来产生复杂的纳米电子器件。这些 Au/Te/Au 组件的电气特性揭示了一些非线性电流 - 电压曲线，以及解释的线性图。这种退火方法和通过在 DNA 折纸模板上的受控播种和退火简单形成的金属-半导体纳米材料有可能在未来产生复杂的纳米电子器件。