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Correlation of Structural, Morphological and Electrochemical Impedance Study of Electrochemically Prepared p-Type Porous Silicon
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2021-08-30 , DOI: 10.1134/s1027451021040157
M. M. Saadeldin , A. S. Mogoda , Soraya Abdelhaleem , M. S. Shalaby

Abstract

A simple and inexpensive metal-catalyzed technique has verified the efficiency of texturing p-type Si wafer at room temperature. This method facilitates the etching of p-type silicon in a solution of HF with the assistance of addition HNO3 as an oxidizing agent to the solution. Electroless deposition of Ag was accomplished on p-type Si (100) surface before immersion in the etchant solution. The physical properties of the porous silicon (P–Si) layer produced as a function of etching time were investigated through various instruments. The nanopores parameters, the average crystallite sizes besides the other micro-structural parameters were calculated for each etching time employing by X-ray diffraction (XRD) technique. The nanopores layer was formed on the surface of Si owing to Ag-enhanced chemical etching of P–Si in an aqueous 11 M HF/0.5 M HNO3 solution. Scanning electron microscopy (SEM), atomic force microscopy (AFM) studied the topographic and roughness of the surface of P–Si. Alternatively, the investigated spectra illustrate that the deposited silver diffuses into the pore while the porosity of P–Si was etching time-dependent in the range of (3.23, 6.01, and 16.12%) for 15, 30 and 60 min, respectively. The contact angles measurements show the hydrophilic nature of the prepared samples. Electrochemical impedance spectroscopy (EIS) shows the electrical equivalent circuit that fitted to the experimental impedance results of the metal-modified silicon surface in an aqueous solution of HF/oxidizing agent.



中文翻译:

电化学制备的 p 型多孔硅的结构、形态和电化学阻抗研究的相关性

摘要

一种简单且廉价的金属催化技术已经验证了在室温下对 p 型硅晶片进行纹理化的效率。该方法在添加 HNO 3的帮助下促进了 HF 溶液中 p 型硅的蚀刻作为溶液的氧化剂。在浸入蚀刻剂溶液之前,在 p 型 Si (100) 表面上完成了 Ag 的化学沉积。通过各种仪器研究了作为蚀刻时间的函数产生的多孔硅 (P-Si) 层的物理性质。纳米孔参数,除其他微结构参数外的平均微晶尺寸通过X射线衍射(XRD)技术计算每个蚀刻时间。由于在 11 M HF/0.5 M HNO 3水溶液中对 P-Si 进行 Ag 增强化学蚀刻,在 Si 表面形成纳米孔层解决方案。扫描电子显微镜 (SEM)、原子力显微镜 (AFM) 研究了 P-Si 表面的形貌和粗糙度。或者,研究的光谱表明沉积的银扩散到孔隙中,而 P-Si 的孔隙率在 (3.23、6.01 和 16.12%) 范围内分别蚀刻 15、30 和 60 分钟。接触角测量显示所制备样品的亲水性。电化学阻抗谱 (EIS) 显示了符合金属改性硅表面在 HF/氧化剂水溶液中的实验阻抗结果的等效电路。

更新日期:2021-08-30
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