Aluminum nitride (AlN) thin films were prepared via Metal organic chemical vapor deposition (MOCVD). The as-grown films were implanted by constant 700 keV energy and swift P ions of influences in different ranges from 1 × 10¹³, 1 × 10¹⁴ to 5 × 10¹⁴ ionscm⁻² with the help of ion beam analysis. The intensity of the thin film decreases with increasing ion fluence, and a decrease in crystallinity takes place at higher ions fluence 5 × 10¹⁴ ionscm⁻². The presence of impurities has been stated to be directly related to the crystalline properties of the samples. Lattice amorphization is observed for the sample irradiated with a fluence of 5 × 10¹⁴ ionscm⁻², which is also confirmed by X-ray diffraction (XRD) analysis. Rutherford backscattering spectroscopy (RBS) was used to determine the composition and thickness of the thin films. The irradiation has evolved changes in the microstructure and optical properties with changes in the band-gap of the samples. We report a tunable band-gap with increasing in P ion doses and suggest that the modifications in structural and optical properties of thin films can be controlled by optimizing the implantation conditions. The latter results illustrate one of the most significant advantages of thin film surface acoustic waves (SAW) technology, namely one can exploit both the piezoelectric properties of the film and the acoustic properties of the substrate and hence devise components with superior performance.

通过金属有机化学气相沉积 (MOCVD) 制备氮化铝 (AlN) 薄膜。借助离子束分析，通过恒定的 700 keV 能量和影响范围从 1 × 10 ¹³、1 × 10 ¹⁴到 5 × 10 ¹⁴ ionscm ^{-2 的}快速 P 离子注入生长的薄膜。薄膜的强度随着离子注量的增加而降低，并且在更高的离子注量 5 × 10 ¹⁴ ionscm ^-2处发生结晶度的降低。已说明杂质的存在与样品的结晶性质直接相关。用 5 × 10 ¹⁴ ionscm的注量照射样品观察到晶格非晶化^-2，这也通过 X 射线衍射 (XRD) 分析得到证实。卢瑟福背散射光谱 (RBS) 用于确定薄膜的组成和厚度。随着样品带隙的变化，辐照使微观结构和光学性质发生了变化。我们报告了随着 P 离子剂量增加的可调带隙，并建议可以通过优化注入条件来控制薄膜结构和光学特性的改变。后一结果说明了薄膜表面声波 (SAW) 技术最显着的优势之一，即可以利用薄膜的压电特性和基板的声学特性，从而设计出具有卓越性能的组件。