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Extraordinarily High Minority Charge Carrier Lifetime Observed in Crystalline Silicon
Solar RRL ( IF 7.9 ) Pub Date : 2021-08-28 , DOI: 10.1002/solr.202100605
Bernd Steinhauser 1 , Tim Niewelt 1, 2 , Armin Richter 1 , Rebekka Eberle 1, 2 , Martin Schubert 1
Affiliation  

Recent progress in surface passivation technology and wafer pretreatment already resulted in significant improvements in the achievable minority charge carrier lifetime of crystalline silicon. Herein, this is further exemplified by studying the lifetime on lowly doped crystalline silicon wafers passivated by poly-Si. To ensure credible lifetime measurements multiple measurement techniques are compared and good agreement between the investigated approaches is found. The resulting lifetime curves are analyzed in detail and the main limitation is very likely caused by silicon bulk recombination—most likely due to impurities. This analysis indicates that even very low impurity concentrations can be a limiting factor at the extraordinary high level of charge carrier lifetime observed in this study. Despite these limitations, lifetimes of 0.18 s on p-type and 0.5 s on n-type crystalline silicon wafers are measured, which to our knowledge exceed previously reported lifetimes. In both cases, these measured lifetimes correspond to an effective minority charge carrier diffusion length of ≈2.5 cm.

中文翻译:

在晶体硅中观察到异常高的少数电荷载体寿命

表面钝化技术和晶片预处理的最新进展已经显着提高了晶体硅可实现的少数电荷载流子寿命。在此,通过研究由多晶硅钝化的低掺杂晶体硅晶片的寿命来进一步说明这一点。为了确保可靠的寿命测量,我们比较了多种测量技术,并发现所研究的方法之间具有良好的一致性。对由此产生的寿命曲线进行了详细分析,主要限制很可能是由硅体复合造成的——最有可能是由于杂质。该分析表明,即使非常低的杂质浓度也可能成为本研究中观察到的极高水平的电荷载流子寿命的限制因素。尽管有这些限制,0 的生命周期。测量了 p 型上的 18 秒和 n 型晶体硅晶片上的 0.5 秒,据我们所知,这超过了之前报道的寿命。在这两种情况下,这些测量的寿命对应于 ≈2.5 cm 的有效少数电荷载流子扩散长度。
更新日期:2021-11-04
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