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Optical gain of AlGaN/GaN multiquantum well laser diode influenced by hydrostatic pressure
Journal of Nanophotonics ( IF 1.5 ) Pub Date : 2021-08-01 , DOI: 10.1117/1.jnp.15.036005
Rajab Yahyazadeh 1 , Zahra Hashempour 1
Affiliation  

A numerical model allows analysis of optical gain according to the electronic properties of AGaN/GaN multiple quantum well laser diode (MQWLD) under hydrostatic pressure. Finite difference techniques are used to acquire energy eigenvalues and their corresponding eigenfunctions of AGaN/GaN MQWLD. The hole eigenstates are calculated via a 6 × 6 k . p method under applied hydrostatic pressure. It was found that the depth of the quantum wells, bandgaps, band offset, electron, and hole density increased with the increase of hydrostatic pressure. The electron and hole wave functions will have less overlap, the amplitude of the optical gain increases, and heavy hole and light hole interband relaxation time, and their excitons binding energy decreases with increasing pressure. A change in pressure of up to 10 GPa caused the optical gain peaks of light and heavy holes to shift to a high photon energy of up to 120 meV and enhanced the optical gain up to 1.7 × 105 m − 1.

中文翻译:

静水压力对AlGaN/GaN多量子阱激光二极管光学增益的影响

数值模型允许根据 AGaN/GaN 多量子阱激光二极管 (MQWLD) 在静水压力下的电子特性分析光学增益。有限差分技术用于获取 AGaN/GaN MQWLD 的能量特征值及其相应的特征函数。空穴本征态通过 6 × 6 k 计算。在应用静水压力下的 p 方法。发现量子阱的深度、带隙、带偏移、电子和空穴密度随着流体静压的增加而增加。电子和空穴波函数重叠较少,光增益幅度增大,重空穴和轻空穴带间弛豫时间增加,激子结合能随着压力的增加而减小。
更新日期:2021-08-29
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