In this work, flexible InGaZnO (IGZO) synaptic thin-film transistors (TFTs) with different gate dielectric layers are fabricated and analyzed to investigate the effect of the gate insulator of flexible IGZO synaptic TFTs in terms of weight window and retention characteristics. The gradual weight modulation of these devices comes from the migration of hydrogens in the Al₂O₃ layer deposited by low-temperature atomic layer deposition and can be controlled by gate bias. In addition, the learning behaviors with identical and incremental pulse schemes are verified for a linear weight modulation, and its effect in pattern recognition accuracy is studied considering device variation and retention properties in a 784 × 10 fully connected neural network with handwritten digit images.

中文翻译：

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柔性 InGaZnO 突触薄膜晶体管的栅极介电层对学习行为的影响

在这项工作中，制造并分析了具有不同栅极介电层的柔性 InGaZnO (IGZO) 突触薄膜晶体管 (TFT)，以研究柔性 IGZO 突触 TFT 的栅极绝缘体在权重窗口和保持特性方面的影响。这些器件的逐渐重量调制来自于通过低温原子层沉积沉积的 Al ₂ O ₃层中的氢迁移，并且可以通过栅极偏置进行控制。此外，针对线性权重调制验证了具有相同和增量脉冲方案的学习行为，并在具有手写数字图像的 784 × 10 全连接神经网络中考虑了设备变化和保留特性，研究了其对模式识别精度的影响。