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Effects of Mg dopant in Al-composition-graded Al x Ga1−x N (0.45≤x) on vertical electrical conductivity of ultrawide bandgap AlGaN p–n junction
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-08-27 , DOI: 10.35848/1882-0786/ac1d64
Kosuke Sato 1, 2 , Kazuki Yamada 2 , Konrad Sakowski 3, 4, 5 , Motoaki Iwaya 2 , Tetsuya Takeuchi 2 , Satoshi Kamiyama 2 , Yoshihiro Kangawa 3 , Pawel Kempisty 3, 4 , Stanislaw Krukowski 4 , Jacek Piechota 4 , Isamu Akasaki 2
Affiliation  

A vertical electrical conductivity of an ultrawide bandgap AlGaN p–n junction with Al-composition-graded Al x Ga1−x N (0.45≤x) p-type layer was systematically investigated via experiments and numerical simulation. The experimental results revealed that the initial Al composition of the Al-composition-graded AlGaN should be sufficiently high without Mg dopants to generate enough holes by polarization-induced doping even though the bandgap is higher than that of conventional bulk p-AlGaN. The mechanism behind the vertical conduction is investigated by the simulation, which shows that three-dimensional hole gas formed by the polarization is compensated with electrons generated by unintentionally formed donors.



中文翻译:

Al成分梯度Al x Ga1-x N(0.45≤x)中Mg掺杂对超宽带隙AlGaN p-n结垂直电导率的影响

通过实验和数值模拟系统地研究了具有 Al 成分梯度 Al x Ga 1- x N (0.45≤ x ) p 型层的超宽带隙 AlGaN p-n 结的垂直电导率。实验结果表明,即使带隙高于常规体 p-AlGaN 的带隙,Al 成分梯度 AlGaN 的初始 Al 成分也应足够高,而不含 Mg 掺杂剂以通过极化诱导掺杂产生足够的空穴。通过模拟研究了垂直传导背后的机制,这表明由极化形成的三维空穴气体被无意形成的施主产生的电子补偿。

更新日期:2021-08-27
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