Temperature-dependent electrical characteristics were explicitly investigated for a 400-μm diameter neutron-irradiated (NI) GaN Schottky barrier diode (SBD). Based on C-V measurements, a marked decrease in electron concentration has been revealed for the NI diode compared with the pristine sample, suggesting a thermal-enhanced carrier removal effect. Neutron irradiation causes noticeable Schottky barrier height inhomogeneity, which was studied by a two-barrier model. Data indicates that neutron irradiation affects a small but measurable suppression of leakage current as well as low frequency noise level. Despite a new deep-level trap was identified, the temperature-dependent electrical results specified GaN SBD's outstanding resistance to neutron irradiations and robustness in extreme operation temperatures.

对直径为 400 微米的中子辐照 (NI) GaN 肖特基势垒二极管 (SBD) 进行了与温度相关的电气特性的明确研究。根据CV测量，与原始样品相比，NI 二极管的电子浓度显着降低，表明热增强载流子去除效果。中子辐照引起明显的肖特基势垒高度不均匀性，这是通过双势垒模型研究的。数据表明，中子辐照对泄漏电流和低频噪声水平的抑制作用很小但可测量。尽管发现了一个新的深能级陷阱，但与温度相关的电气结果表明 GaN SBD 在极端操作温度下具有出色的抗中子辐照能力和稳健性。